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Glemco

Glemco manufactures ion implantation consumables and repair parts for semiconductor equipment. The company supports implanters from Varian, Applied Materials, Axcelis, and other vendors, serving processes including CVD and atmospheric pressure CVD. Glemco operates a 22,000 square foot facility with in-house manufacturing.

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10keVAXCELISAxcelis GSD/HE and VHE systems were designed to deliver exceptional productivity, lowest COO, and unmatched process flexibility. The tools provide the broadest range of ion implantation capability, from 10keV to 5MeV, to perform retrograde well, double well, triple well, channel and buried layer implants. Both systems utilize the production proven RF Linear Accelerator LINAC which delivers benchmark productivity, reliability and uptime performance.
120keVFor customers requiring an extended upper energy range, the Quantum 120 boosts energy to.
1E15QUADMaximum 200mm mechanical throughput range has been extended from the xR LEAP to doses of, while the system achieves a 60 percent throughput increase when used for quad implants. Quantum ‘s extremely short source-to-wafer beam path, which minimizes beam “blow up” and energy contamination, has been further optimized to improve precision at all energies. technology ensures excellent energy accuracy and improved energy control for ultra-low energy implants to a remarkable / 7.5 volts.
200E2Ion Implantation consumables and machine maintenance and support for GSD Classic, 80, 160, 200, 200E, , HE, HE3, VHE, III, Ultra, HC3, Optima HD, MD, Paradigm, Resonator, End Station
200eVThe Quantum LEAP for ultra-low energies offers a range of to 80keV enables implant of ultra shallow junctions in the most advanced devices.
200eVThe Quantum system’s extremely short beam path minimizes beam “blow up” and energy contamination, with technology that ensures energy accuracy and control for ultra-low energy implants to /-0.5. Quantum implanters are currently available in three models the Quantum LEAP technology, which offers an ultra-low energy range of to 80keV the Quantum 80, which covers a range of 2keV to 80keV and the Quantum 120, which performs at an extended upper energy range to 120keV.
200eVQuantum LEAP tm Low Energy Advanced Processing ion implantation systems were introduced in July 1999. The Quantum ion implantation system uses a, small footprint platform that bridges 200mm and 300mm wafer sizes. High throughput and productivity are possible at low energies down to a requirement for the critical implants used in 0.18 micron and below devices.
2keVThe Quantum 80 offers a range of 2keV to 80keV, covering virtually all of the high current implants used in 0.25 micron to 0.18 micron designs.
2XnmAXCELISThe Optima HDx high current implanter provides solutions for device manufacturers highest dose requirements with the versatility and extendibility to provide solutions beyond today’s 2Xnm technology node. The emergence of higher dose and lower energy halo and source drain extension implants for 90 and 65 nm nodes drove the design of Axcelis ‘s Optima MD ion implanter.
300-mmA end station capable of batch processing wafers, at a mechanical throughput equal to or exceeding that for 200-mm wafers in the GSD/HE system, has been developed. An evolutionary beam line has been developed, including a mass-analysis magnet, final energy magnet and resonators with increased voltage output and higher efficiency. The HE3 also incorporates the extended life source technology, designed to obtain high beam current and long source life for multiply charged ions.
3000XPVARIANThe VIISta is also ideally suited for medium-current back-up. The system features the same single-wafer end station, dosimetry system, and wafer positioning system as the market-leading medium-current VIISta 900XP.
3000XPVARIANThe VIISta, built on the acclaimed Varian dual-magnet single-wafer architecture, delivers the angle precision required for advanced high-energy applications.
350DAMATVARIAN is a dynamic ion implanter and monitor manufactured by Applied Materials, Inc. This advanced machine is designed to be used by departments specializing in semiconductor and thin films for processes requiring high-energy ions to be implanted in a material. VARIAN uses a digital scanning algorithm to deliver highly precise ion implantation profiles that are suitable for a number of applications.
80-10/120-10AMATIon Implantation consumables and machine maintenance and support for , 80XP, 160XP, 180XP, CF/DF 4, 5, 3000, 350D, 300XP, E220, E500, Viision 80/200, Viista 810, 900XP, HC, HCP
80keVAMATIn less than a decade datalock is introduced, as well as automated loading processes. Single charged energy went from 80keV to 160keV. LINAC based acceleration is added to commercial semiconductor manufacturing. Oxygen implantation is introduced, bringing on commercial SOI production. istributed control systems are developed. Applied Materials entered into the high current market place.
810XPVARIANVARIAN VIISTa is a high-performance ion implanter and monitor that is designed to provide processes with superior results. This machine is capable of meeting the precision and accuracy requirements needed for today’s demanding semiconductor manufacturing environment. With a modern digital architecture, VARIAN VIISTA 810 XP provides users with an intuitive control interface that is easy to use and powered by advanced monitoring algorithms. This allows users to have an efficient and simplified setup process with minimal operational errors.
858/859DELATECHIon Implantation consumables and machine maintenance and support for Delatech
9000/9200Ion Implantation consumables and machine maintenance and support for , 9500, Quantum, XR80, XR LEAP
900XPVARIANVIIsta
900XPVARIANThe VIISta delivers precision, cleanliness, productivity, and production worthiness in the medium current ion implantation market. In addition, an extended energy range that allows for operation at 300keV and 600keV with and charge states, respectively, makes the VIISta more productive than traditional batch high-energy tools for sub-MeV well applications.
900XPVARIANRepeatable and accurate implant angle control is critical for precision doping in high-volume manufacturing of advanced devices. The Varian Positioning System VPS ensures the required level of control over the full applications envelope. The VIISta features the cleanest beam line in the industry. A filter magnet removes the majority off cross-species right at the source. The dual-magnet architecture isolates the wafer from beam-borne metals, particles, and other contamination in the analyzer magnet and the mass-resolving aperture regions. The VIISta offers industry-leading 500WPH mechanical throughput. Single-wafer parallel path wafer handling, fast beam set-up times, and an option for higher beam current add to the tool’s impressive overall productivity.
90nmThe Quantum III system provides chipmakers with the extendibility to perform high-accuracy ultra-shallow junction implants for 90nm and below designs.
90nm-generationAMATApplied Quantum III is a batch implanter which elevates low energy implant performance to levels never before achieved in the industry. The Quantum III system breaks the 50 wafer-per-hour throughput barrier for critical 90nm-generation low energy implants by increasing beam current 15-20 percent for most applications, while significantly reducing scan time, to provide a 20-50 percent gain in system productivity
AS-2000SCREENConsumables and machine maintenance and support for DNS
CDO 858/859DELATECHThe Delatech CDO 858/859 Exhaust Gas Scrubber has long been considered the standard for Advanced Chemical Vapor Deposition CVD Process gas abatement, and has been effectively used with all PECVD, LPCVD MOCVD process gases. Delatech scrubbers are also widely used in Thin Film processes. This versatile gas scrubber utilizes a combination Thermal Oxidation Chamber and a Primary/Secondary Cooling Wet Scrubbing Chamber to effectively abate toxic, flammable and corrosive gases.
E-500HPVARIANFurthermore, the automated alignment machine allows for precise alignment of the beam. The E500 includes a real-time particle monitor to ensure the quality and uniformity of the wafers. This particle monitor allows for continuous measurement of particle size and charge that are necessary to ensure the electrical properties of the wafer. is designed with a number of safety features to protect both the user and the device. An emergency stop tool can be engaged if the device malfunctions. An additional shut-off asset will shut down the entire model automatically after a specified period of inactivity. E500HP is a world-leading ion implanter and monitor that use state-of-the-art technology to provide accurate and precise ion implantation into silicon semiconductor wafers. The multi-energy implant technology enables one to customize the implantation process for the desired electronic properties. The advanced beam current monitor, high power electron optics equipment, and real-time particle monitor all ensure accuracy and uniformity in the implantation.
E220VARIANVarian ‘s ion implanters, such as the , E500, and E500 HP, are machines that deliver a controlled dose and energy to the target material. These machines utilize advanced technologies like beam line control, dose control, and energy control to ensure consistent and reliable implantation results. The Varian implant systems are proven platforms with a wide range of processes utilized by a large global install base.
E500VARIANVARIAN HP is a state-of-the-art ion implanter and monitor that is used to embed desired ions into silicon semiconductor wafers. The utilizes mono- or multi-energy implanters to inject various ions into the wafer for the desired electronic properties. The multi-energy implant technology allows one to customize the implantation process using different beam settings ranging from low to high energies. This allows for a much more accurate doping control and reduces the risk of adverse effects such as over-doping or contamination.
HE3GSD HE / HE3 / VHE
NV-GSD-HE3The NV-GSD-HE3 is a high energy implanter, improving upon the design concepts of the industry-leading GSD/HE series, and was developed in order to meet and future device process requirements. Besides processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE while maintaining the same twin well and triple well process capability.
xR80Quantum xR80 and xR LEAP’s System of low energy implantation is an essential technology for the fabrication of semiconductors using 0.18 micron and below features. Designed for 300mm wafers, the Quantum evolutionary platform is easily adaptable to 200mm and 150mm wafer sizes. The system incorporates a 300mm compatible factory automation module for fully automatic wafer handling, yet remains almost the same size as the company’s compact 200mm xR LEAP system.