NV-GSD-HE3

The NV-GSD-HE3 is a high energy implanter, improving upon the design concepts of the industry-leading GSD/HE series, and was developed in order to meet and future device process requirements. Besides processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE while maintaining the same twin well and triple well process capability.